PSMN013-100YSE Datasheet | NXP Semiconductors

18 December 2012 N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 Product data sheet 1. General description Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 °C. Part of NXP's "Next Power Live" portfolio, the PSMN013-100YSE plements the latest "hotswap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telemunication systems based on a 48 V backplane / supply rail. 2. Features and benefits - - Enhanced forward biased safe operating area for superior linear mode operation Very low RDS(on) for low conduction losses 3. Applications - - - - Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 100 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 20 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 20 A; VDS = 50 V; Fig. 14; Fig. 15 26 75 n C n C Min Typ Max 100 58 238 Unit V A W Static characteristics drain-source on-state resistance 11 13 mΩ Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge Scan or click this QR code to view the latest information for this product NXP Semiconductors N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 82 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 Min - Typ - Max 125 Unit m J Avalanche Ruggedness 5. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to...