PSMN017-60YS
description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment.
1.2 Features and benefits
- Advanced Trench MOS provides low RDSon and low gate charge
- High efficiency gains in switching power converters
- Improved mechanical and thermal characteristics
- LFPAK provides maximum power density in a Power SO8 package
1.3 Applications
- DC-to-DC converters
- Lithium-ion battery protection
- Load switching
- Motor control
- Server power supplies
1.4 Quick reference data
Table 1. VDS
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Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 45 A; Vsup ≤ 60 V; RGS = 50 Ω; unclamped VGS = 10 V; ID = 30 A; VDS = 30 V; see Figure 13 and 14 Typ Max 60 44 74 175 45 Unit V A W °C m J drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction...
