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PSMN059-150Y - N-channel TrenchMOS SiliconMAX standard level FET

General Description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

2.

Key Features

  • Higher operating power due to low thermal resistance Suitable for high frequency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LF PSMN059-150Y 3 October 2013 PA K 56 N-channel TrenchMOS SiliconMAX standard level FET Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits • • Higher operating power due to low thermal resistance Suitable for high frequency applications due to fast switching characteristics 3. Applications • • • • Class D amplifier DC-to-DC converters Motion control Switched-mode power supplies 4. Quick reference data Table 1.