PSMN2R0-60PS
Overview
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
- High efficiency due to low switching and conduction losses
- Suitable for standard level gate drive sources 1.3 Applications
- DC-to-DC converters
- Load switching
- Motor control
- Server power supplies 1.4 Quick reference data Table
- Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 [1] Min -55 Typ - Max 60 120 338 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 12; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 30 V; Fig. 14; Fig. 15 32 137 45 192 nC nC 3 3.5 mΩ [2] -
- 2 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors
