PSMN2R6-60PS Datasheet | NXP Semiconductors

5 February 2013 TO -2 20A N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using Trench MOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits - - - High efficiency due to low switching & conduction losses Robust construction for demanding applications Standard level gate 3. Applications - - - - Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 48 V; VGS = 10 V; Fig. 13; Fig. 14 140 43.7 n C n C [1] Min - Typ - Max 60 150 326 Unit V A W Static characteristics drain-source on-state resistance 1.97 2.6 mΩ Dynamic characteristics QG(tot) QGD total gate charge gate-drain charge [1] Continuous current is limited by package. Scan or click this QR code to view the latest information for this product NXP Semiconductors N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 5. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G D S gate drain...