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PSMN3R0-30YLD - N-channel MOSFET

General Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

Key Features

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 pack.

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Other Datasheets by NXP Semiconductors

Part Number Description
PSMN3R0-30YL MOSFET
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PSMN3R0-60PS N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LF PSMN3R0-30YLD 18 February 2014 PA K 56 N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2.