PSMN3R4-30PL Datasheet | NXP Semiconductors

N-channel 30 V 3.4 mΩ logic level MOSFET Rev. 01 - 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state VGS = 4.5 V; ID = 10 A; resistance Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped 8 31 n C n C [2] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 3.5 2.8 Max Unit 30 100 114 175 4.1 3.4 V A W °C mΩ mΩ Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 200 m J NXP Semiconductors N-channel 30 V 3.4 mΩ logic level MOSFET [1] [2] Continuous current is limited by package. Measured 3 mm from package. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain...