PSMN4R4-30MLC Datasheet | NXP Semiconductors

PA K N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using Next Power Technology Rev. 3 - 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - Low parasitic inductance and resistance - Optimised for 4.5V Gate drive utilising Next Power Superjunction technology - Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications - DC-to-DC converters - Load switching - Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 10 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 10 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 12; see Figure 13 VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 12; see Figure 13 2.9 10.6 n C n C Conditions Tj = 25 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 5.2 4.05 Max 30 70 69 175 6 4.65 Unit V A W °C mΩ mΩ Static characteristics [1] Continuous current is limited by package. NXP Semiconductors N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using Next Power Technology 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3 4...