PSMN8R3-40YS Datasheet | NXP Semiconductors

.Data Sheet.co.kr N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET Rev. 01 - 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - Advanced Trench MOS provides low RDSon and low gate charge - High efficiency gains in switching power converters - Improved mechanical and thermal characteristics - LFPAK provides maximum power density in a Power SO8 package 1.3 Applications - DC-to-DC convertors - Lithium-ion battery protection - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 62 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω VGS = 10 V; ID = 25 A; VDS = 20 V; see Figure 14; see Figure 15 Typ Max 40 70 74 175 33 Unit V A W °C m J drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 4.5 20 n C n C Datasheet pdf - http://..net/ .Data Sheet.co.kr NXP Semiconductors N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET Quick reference …continued Conditions VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13 Min Typ 6.6 Max 11.6 8.6 Unit mΩ mΩ Table 1. Symbol Parameter Static characteristics RDSon drain-source on-state resistance 2. Pinning...