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PSMN9R0-30YL - N-channel FET

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in industrial and communications applications.

Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources 1.3.

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Datasheet Details

Part number PSMN9R0-30YL
Manufacturer NXP Semiconductors
File Size 194.30 KB
Description N-channel FET
Datasheet download datasheet PSMN9R0-30YL Datasheet

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Full PDF Text Transcription

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LFPAK PSMN9R0-30YL N-channel 30 V 8 mΩ logic level MOSFET in LFPAK Rev. 04 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for logic level gate drive sources 1.3 Applications  Class-D amplifiers  DC-to-DC converters  Motor control  Server power supplies 1.4 Quick reference data Table 1.
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