PSMN9R0-30YL Datasheet | NXP Semiconductors

LFPAK N-channel 30 V 8 mΩ logic level MOSFET in LFPAK Rev. 04 - 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in industrial and munications applications. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - Class-D amplifiers - DC-to-DC converters - Motor control - Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 15 A;...