NXP Semiconductors 1815
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 150 mA)● Low voltage (max. 50 V).
APPLICATIONS
● General purpose switching and amplification, e.g. audio amplifier driver stages. 1 handbook, halfpage 2PC1815 PINNING PIN 1 2 3 base collector emitterDESCRIPTION
DESCRIPTION
NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA1015. 2 3 2 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 50 5 150 200 200 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 May 28 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.