1N5242B Datasheet | NXP Semiconductors

FEATURES - Total power dissipation: max. 500 m W - Tolerance series: ±5% - Working voltage range: nom. 3.0 to 75 V - Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. k a MAM239 APPLICATIONS - Low-power voltage stabilizers or voltage references. The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb = 50 °C; lead length max.; note 1 Lead length 8 mm; note 2 PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.3 tp = 8.3 ms; square wave; Tj ≤ 55 °C prior to surge Tstg Tj Notes 1. Device mounted on a printed circuit-board without metallization pad. 2. Tie-point temperature ≤ 75 °C. ELECTRICAL CHARACTERISTICS Table 1 Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 200 m A; see Fig.4 MAX. 1.1 UNIT V storage temperature junction temperature CONDITIONS MIN. - MAX. 250 UNIT m A see Table “Per type” - - - - - 65 - 65 400 500 40 10 +200 +200 m W m W W W °C °C 1996 Apr 26 1996 Apr 26 3 Philips Semiconductors Per type Tj = 25 °C; unless otherwise specified. WORKING DIFFERENTIAL VOLTAGE RESISTANCE VZ (V)(1) rdif (Ω) at IZtest at IZtest NOM. 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 MAX. 1600 1600 1700 1900...