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1N5818 - Schottky barrier diodes

General Description

The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology.

(1) Implotec is a trademark of Philips.

Fig.1 Simplified outline (SOD81) and symbol.

Key Features

  • Low switching losses.
  • Fast recovery time.
  • Guard ring protected.
  • Hermetically sealed leaded glass package.

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Other Datasheets by NXP Semiconductors

Part Number Description
1N5817 Schottky barrier diodes
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed leaded glass package. APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection. handbook, 4 columns 1N5817; 1N5818; 1N5819 DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol.