Datasheet Details
| Part number | 1N5818 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 37.44 KB |
| Description | Schottky barrier diodes |
| Datasheet | 1N5818_PhilipsSemiconductors.pdf |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier.
| Part number | 1N5818 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 37.44 KB |
| Description | Schottky barrier diodes |
| Datasheet | 1N5818_PhilipsSemiconductors.pdf |
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The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology.
(1) Implotec is a trademark of Philips.
k a MAM218 Fig.1 Simplified outline (SOD81) and symbol.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
1N5818 | Low drop power Schottky rectifier | STMicroelectronics |
 |
1N5818 | SCHOTTKY BARRIER RECTIFIERS | MotorolaInc |
 |
1N5818 | 1.0A SCHOTTKY BARRIER RECTIFIER | Diodes |
 |
1N5818 | SCHOTTKY BARRIER RECTIFIERS | PAN JIT |
 |
1N5818 | 1.0A SCHOTTKY BARRIER DIODE | WON-TOP |
| Part Number | Description |
|---|---|
| 1N5817 | Schottky barrier diodes |
| 1N5819 | Schottky barrier diodes |
| 1N5059 | Controlled avalanche rectifiers |
| 1N5060 | Controlled avalanche rectifiers |
| 1N5061 | Controlled avalanche rectifiers |
| 1N5062 | Controlled avalanche rectifiers |
| 1N5225B | Voltage regulator diodes |
| 1N5226B | Voltage regulator diodes |
| 1N5227B | Voltage regulator diodes |
| 1N5228B | Voltage regulator diodes |