1N829 Datasheet | NXP Semiconductors

FEATURES - Temperature pensated - Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V) - Low temperature coefficient range: max. 0.0005 to 0.01 %/K. k handbook, halfpage 1N821 to 1N829 1N821A to 1N829A DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. a MAM216 APPLICATION - Voltage reference sources in measuring instruments such as digital voltmeters. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ Ptot Tstg Tj Tamb PARAMETER working current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 50 °C CONDITIONS MIN. - - - 65 - - 55 MAX. 50 400 +200 200 +100 UNIT m A m W °C °C °C 1996 Mar 20 Philips Semiconductors Product specification Voltage reference diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Vref ∆Vref PARAMETER reference voltage reference voltage excursion 1N821; 1N821A 1N823; 1N823A 1N825; 1N825A 1N827; 1N827A 1N829; 1N829A SZ temperature coefficient 1N821; 1N821A 1N823; 1N823A 1N825; 1N825A 1N827; 1N827A 1N829; 1N829A rdif differential resistance 1N821 to 1N829 1N821A to 1N829A Notes IZ = 7.5 m A; see Fig.4 - - IZ = 7.5 m A: see Fig.3; notes 1 and 2 CONDITIONS IZ =7.5 m A IZ =7.5 m A; test points for Tamb: - 55; +25; +75; +100 °C; see Fig.2; notes 1 and 2 MIN. 5.89 - - - - - - - - - - 1N821 to 1N829 1N821A to 1N829A TYP. 6.20 - - - - - - - - - - - - MAX. 6.51 96 48 19 9 5 0.01 0.005 0.002 0.001 V UNIT m V m V m V m V m V %/K %/K %/K %/K 0.0005 %/K 15 10 Ω Ω 1. The quoted values of ∆Vref are based on a constant current IZ. Two factors can cause ∆Vref to change, namely the differential resistance rdif and the temperature coefficient SZ. a) As the max. rdif of the device can be 15 Ω, a change of 0.01 m A in the current through the reference diode will result in a ∆Vref of 0.01 m A × 15 Ω = 0.15 m V. This level of ∆Vref is not significant on...