1PS193 Datasheet | NXP Semiconductors

FEATURES - Small plastic SMD package - High switching speed: max. 4 ns - Continuous reverse voltage: max. 80 V - Repetitive peak reverse voltage: max. 85 V - Repetitive peak forward current: max. 500 m A. 2 1 DESCRIPTION The 1PS193 is a high-speed switching diode, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode APPLICATIONS - High-speed switching in e.g. surface mounted circuits. 3 Top view Marking code: F3T. MAM085 2 n.c. 3 Fig.1 Simplified outline (SC59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge t = 1 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - 65 - 4 0.5 250 +150 150 A A m W °C °C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 85 80 215 500 V V m A m A UNIT 1996 Sep 11 Philips Semiconductors Product specification High-speed diode ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 m A IF = 10 m A IF = 50 m A IF = 100 m A IR reverse current see Fig.4 VR = 25 V VR = 80 V VR = 25 V; Tj = 150 °C VR = 80 V; Tj = 150 °C; Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.5 when switched from IF = 10 m A to IR = 10 m A; RL = 100 Ω; measured at IR = 1 m A; see Fig.6 when switched from IF = 10 m A; tp = 20 ns; see Fig.7 - - - - - - 30 610 740 - - - - CONDITIONS TYP. MAX. UNIT m V m V V V n A µA µA µA p F ns 1.0 1.2 0.5 30 100 1.5 4 Vfr forward recovery voltage -...