1PS301 Datasheet | NXP Semiconductors

description Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits - High switching speed: trr  4 ns - Repetitive peak reverse voltage: VRRM  85 V - Reverse voltage: VR  80 V - AEC-Q101 qualified - Low capacitance: Cd  1.5 p F - Repetitive peak forward current: IFRM  500 m A - Very small SMD plastic package 1.3 Applications - High-speed switching - General-purpose switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IF forward current Conditions IR reverse current VR = 80 V VR reverse voltage trr reverse recovery time Min Typ Max Unit [1] [2] - - 250 m A [3] - - 160 m A - - 0.5 A - - 80 V [4] - - 4 ns [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Single diode loaded. [3] Double diode loaded. [4] When switched from IF = 10 m A to IR = 10 m A; RL = 100 ; measured at IR = 1 m A. NXP Semiconductors Dual high-speed switching diode 2. Pinning information Table 2. Pin 1 2 3 Pinning Description anode (diode 1) anode (diode 2) mon cathode Simplified outline Graphic...