1PS79SB31 Datasheet | NXP Semiconductors

FEATURES - Very low forward voltage - Guard ring protected - Ultra small SMD package. APPLICATIONS - Ultra high-speed switching - Voltage clamping - Protection circuits - Low current rectification - Low power consumption applications (e.g. hand-held devices). DESCRIPTION Planar Schottky barrier diode in a SOD523 (SC-79) ultra small SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 t = 8.3 ms half sine wave; JEDEC method CONDITIONS - - - - - 65 - - 65 MIN. 1PS79SB31 handbook, halfpage k Marking code: G3. The marking bar indicates the cathode. Top view a MAM403 Fig.1 Simplified outline SOD523 (SC-79) and symbol. MAX. 30 200 300 1000 +150 125 +125 V UNIT m A m A m A °C °C °C 2002 Jan 11 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2; IF = 0.1 m A IF = 1 m A IF = 10 m A IF = 100 m A IF = 200 m A IR Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-79 (SOD523) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 450 continuous reverse current diode capacitance VR = 10 V; note 1; see Fig.3 VR = 1 V; f = 1 MHz; see Fig.4 130 190 255 355 420 2.5 20 MIN. MAX. 190 250 300 410 500 30 25 UNIT m V m V m V m V m V µA p F UNIT K/W 2002 Jan 11 Philips Semiconductors Product specification Schottky barrier diode GRAPHICAL DATA MGU517 103 handbook, halfpage IF (m...