1PS79SB40 Datasheet | NXP Semiconductors

FEATURES - Low forward voltage - Guard ring protected - Ultra small SMD package - Low diode capacitance. APPLICATIONS - Ultra high-speed switching - Voltage clamping - Protection circuits - Blocking diodes. DESCRIPTION Planar Schottky barrier diode encapsulated in an SC-79 (SOD523) ultra small plastic SMD package. handbook, halfpage k Marking code: T. The marking bar indicates the cathode. Top view a MAM403 Fig.1 Simplified outline SC-79 (SOD523) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms CONDITIONS - - - - - 65 - - 65 MIN. MAX. 40 120 120 200 +150 150 +150 UNIT V m A m A m A °C °C °C 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS see Fig.2 IF = 1 m A IF = 10 m A IF = 40 m A IR Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-79 (SOD523) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current diode capacitance VR = 30 V; note 1; see Fig.3 VR = 40 V; note 1; see Fig.3 VR = 0; f = 1 MHz; see Fig.5 380 500 1 1 10 5 MAX. UNIT m V m V V µA µA p F VALUE 450 UNIT K/W 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diode GRAPHICAL DATA MLC361 - 1 2 10 handbook, halfpage 103 handbook, halfpage IR...