1PS79SB62 Datasheet | NXP Semiconductors

FEATURES - Ultra high switching speed - Very low capacitance - High breakdown voltage - Guard ring protected - Ultra small plastic SMD package. APPLICATIONS - Ultra high-speed switching - High frequency applications. DESCRIPTION Epitaxial Schottky barrier diode encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. ESD sensitive device, observe handling precautions. PINNING 1PS79SB62 handbook, halfpage 1 k Marking code: S9. Fig.1 1 2 Top view DESCRIPTION cathode anode 2 a MAM403 Simplified outline (SOD523; SC-79) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Tstg Tj Tamb continuous reverse voltage continuous forward current storage temperature junction temperature operating ambient temperature PARAMETER - - - 65 - - 65 MIN. MAX. 40 20 +150 125 +125 V m A °C °C °C UNIT 2001 Jan 18 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD523 (SC-79) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS forward voltage reverse current diode capacitance PARAMETER CONDITIONS IF = 2 m A; see Fig.2; note 1 VR = 40 V; see Fig.3; note 1 VR = 0 V; f = 1 MHz; see Fig.4 1 0.6 MAX. 800 UNIT m V µA p F VALUE 450 UNIT K/W 2001 Jan 18 Philips Semiconductors Product specification Schottky barrier diode GRAPHICAL...