1PS89SS05 Datasheet | NXP Semiconductors

FEATURES - Power dissipation parable to SOT23 - Ultra small plastic SMD package - High switching speed: max. 4 ns - Continuous reverse voltage: max. 80 V - Repetitive peak reverse voltage: max. 85 V - Repetitive peak forward current: max. 500 m A. APPLICATIONS - High speed switching in e.g. surface mounted circuits. DESCRIPTION Two high-speed switching diodes in planar technology, with different configurations, in an ultra small SC-89 (SOT490) plastic SMD package. fpage 1PS89SS04; 1PS89SS05; 1PS89SS06 PINNING 1PS89SS.. PIN 04 1 2 3 a1 k2 k1, a2 05 a1 a2 k1, k2 06 k1 k2 a1, a2 Fig.2 1 2 MGL550 1PS89SS04 diode configuration (symbol). 3 3 1 1 Top view 2 MBK837 MGL551 Fig.1 Simplified outline (SC-89; SOT490) and pin configuration. Fig.3 1PS89SS05 diode configuration (symbol). MARKING TYPE NUMBER 1PS89SS04 1PS89SS05 1PS89SS06 MARKING CODE S4 S5 S6 Fig.4 3 2 MGL552 1PS89SS06 diode configuration (symbol). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS - - Tamb = 25 °C; note 1; see Fig.5 single diode loaded both diodes loaded IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.7 t = 1 µs t=1s - - 4 0.5 A A - - - 200 125 500 m A m A m A MIN. MAX. UNIT Per diode unless otherwise specified VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current 85 80 V V 1999 Jun 08 Philips Semiconductors Preliminary specification High-speed double diodes 1PS89SS04; 1PS89SS05; 1PS89SS06 CONDITIONS...