NXP Semiconductors 2506DF
BU2506DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.FEATURES
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL V PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 3.0 1.6 0.25 MAX. 1500 700 5 8 45 5.0 2.0 0.5 UNIT V V A A W V A V µs VCESM IC ICM Ptot VCEsat ICsat VF tf CEO Ths ≤ 25 ˚C IC = 3.0 A; IB = 0.79 A IF = 3.0 A ICsat = 3.0 A; IB(end) = 0.67 A PINNING - SOT199 PIN 1 2 3 base collector emitterDESCRIPTION
PIN CONFIGURATION case SYMBOL c b Rbe case isol...