2508DF Datasheet PDF

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.

FEATURES

exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.4 MAX. 1500 700 8 15 45 1.0 2.0 0.6 UNIT V V A A W V A V µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.12 A IF = 4.5 A ICsat = 4.5 A; IB(end) = 1.1 A PINNING - SOT199 PIN 1 2 3 base collector emitter

DESCRIPTION

PIN CONFIGURATION case SYMBOL c b Rbe case isolat...