Datasheet4U Logo Datasheet4U.com

2527AF - BU2527AF

General Description

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors.

Key Features

  • improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2520-6002UB (2500 Series) HEADER CONNECTOR 3M Interconnect Solutions
2520-60xxxx (2500 Series) HEADER CONNECTOR 3M Interconnect Solutions
252012CDMC SMD Power Inductor Sumida
2525 USB POWER CONTROL SWITCHES Allegro MicroSystems
2526 USB DUAL POWER CONTROL SWITCHES Allegro MicroSystems

Other Datasheets by NXP Semiconductors

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 45 5.0 2.