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2527AF - BU2527AF

Datasheet Summary

Description

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors.

Features

  • improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK.

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Datasheet Details

Part number 2527AF
Manufacturer NXP
File Size 83.40 KB
Description BU2527AF
Datasheet download datasheet 2527AF Datasheet
Additional preview pages of the 2527AF datasheet.

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    www.DataSheet4U.com Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 45 5.0 2.
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