GENERAL DESCRIPTION
Glass passivated sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications. QUICK REFERENCE DATA SYMBOL PARAMETER VDRM, VRRM IT(AV) IT(RMS) ITSM Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. UNIT 200 V 0.5 A 0.8 A 10 A PINNING - TO92 variant PIN DESCRIPTION
1 anode 2 gate 3 cathode PIN CONFIGURATION 3 21 SYMBOL a k g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITRM Average on-state current RMS on-state current Repetitive peak on-state current half sine wave Tc ≤ 67 ˚C Tc ≤ 102 ˚C all conduction angles ITSM Non-repetitive peak half sine wave; Ta = 25 ˚C prior to surge; on-state current t = 8.3 ms I2t I2t for fusing t = 8.3 ms IGM VGM VRGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage...
NXP Semiconductors
