NXP Semiconductors 2N6427
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | 2N6427 |
|---|---|
| Datasheet | 2N6427 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN Darlington transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 500 mA)● Low voltage (max. 30 V)
● High DC current gain (min. 10000).
APPLICATIONS
● General purpose● High gain amplification.
DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic package. MAM252 2N6427 PINNING PIN 1 2 3 collector base emitterDESCRIPTION
handbook, halfpage 2 1 1 2 3 TR1 TR2 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 10 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open emitter VBE = 0 CONDITIONS − − − − 10000 125 MIN. MAX. 40 30 500 625 100000 − MHz V V mA mW UNIT 1997 Jul 04 2 Philips Semiconductors Product specification NPN Darlington transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board.
