Key Features
- High current (max. 500 mA)
- Low voltage (max. 30 V)
- High DC current gain (min. 10000). APPLICATIONS
- General purpose
- High gain amplification. DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. MAM252 2N6427
Datasheets by Manufacturer
- 2N6427 — Samsung Semiconductor — NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
- 2N6427 — onsemi — Darlington Transistors
- 2N6428 — Samsung Semiconductor — NPN EPITAXIAL SILICON TRANSISTOR
- 2N6428A — Samsung Semiconductor — NPN EPITAXIAL SILICON TRANSISTOR
