NXP Semiconductors 2N7002BKMB
single N-channel MOSFET
FEATURES AND BENEFITS
● Very fast switching● Trench MOSFET technology
● ESD protection up to 2 kV
● Logic-level compatible
● Ultra thin package profile with 0.37 mm height 1.3
APPLICATIONS
● Relay driver● High-speed line driver
● Low-side loadswitch
● Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 450 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 1 Max 60 20 450 1.6 Unit V V mA Ω Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors 2N7002BKMB 60 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol
DESCRIPTION
G S D gate source drain 1 3 2 Transparent top view G D Simplified outline Graphic symbol SOT883B (DFN1006B-3) S 017aaa255 3.