2N7002BKW Datasheet PDF

FEATURES AND BENEFITS

„ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 2 kV „ AEC-Q101 qualified 1.3

APPLICATIONS

„ Relay driver „ High-speed line driver „ Low-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA - - 60 V - - ±20 V [1] - - 310 mA - 1 1.6 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D

DESCRIPTION

gate source drain Simplified outline Graphic symbol 3 D G 1 2 S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name

DESCRIPTION

2N7002BKW SC-70 plastic surface-mounted package; 3 leads 4.