NXP Semiconductors 2PB1424
PNP transistor
| Part No. | 2PB1424 |
|---|---|
| Datasheet | 2PB1424 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP transistor |
| Buy | Stock & Price |
FEATURES
I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3APPLICATIONS
I DC-to-DC conversion I MOSFET gate driving I Motor control I Charging circuits I Power switches (e.g. motors, fans) I Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Symbol VCEO IC ICM Quick reference data Parameter collector-emitter voltage collector current peak collector current VCEsat collector-emitter saturation voltage [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Conditions open base single pulse; tp ≤ 1 ms IC = −2 A; IB = −0.1 A Min Typ Max Unit - - −20 V - - −3 A - - −5 A [1] - −0.2 −0.5 V NXP Semiconductors 2PB1424 20 V, 3 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 PinningDESCRIPTION
emitter collector base Simplified outline Symbol 321 2 3 1 006aaa231 3.
