2PC4617 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 50 V). APPLICATIONS - General purpose switching and amplification in munication, electronic data processing (EDP) and consumer applications. handbook, halfpage PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 1 DESCRIPTION NPN transistor in an SC-75 plastic package. PNP plement: 2PA1774. MARKING TYPE NUMBER 2PC4617Q 2PC4617R 2PC4617S MARKING CODE ZQ ZR ZS Fig.1 Simplified outline (SC-75) and symbol. 1 Top view MAM348 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 50 50 5 100 200 200 150 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 1999 May 21 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain 2PC4617 2PC4617Q 2PC4617R 2PC4617S VCEsat Cc f T Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage IC = 50 m A; IB = 5 m A; note 1 collector capacitance transition frequency IE = ie = 0; VCB = 12 V; f = 1 MHz CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 4 V IC = 1 m A; VCE = 6 V; note 1 120 120 180 270 - - 560 270 390 560 200 1.5 - - - - MIN. 5 100 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 833 UNIT K/W MAX. 100 UNIT n A µA n A m V p F...