NXP Semiconductors 2PD2150
NPN low VCEsat transistor
| Part No. | 2PD2150 |
|---|---|
| Datasheet | 2PD2150 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN low VCEsat transistor |
| Buy | Stock & Price |
FEATURES
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3APPLICATIONS
s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1: Symbol VCEO ICM hFE Quick reference data Parameter collector-emitter voltage peak collector current DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = 2 V; IC = 0.1 A Min 180 Typ Max 20 3 390 Unit V A Philips Semiconductors 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 PinningDESCRIPTION
emitter collector base 3 2 1 3 1 sym042 Simplified outline Symbol 2 3. Ordering information Table 3: Ordering information Package Name 2PD2150 SC-62DESCRIPTION
plastic surface mounted package; collector pad for good heat transfer; 3 leads Version SOT89 Type number 4.
