2PD601A Datasheet | NXP Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 50 V). APPLICATIONS - General purpose switching and amplification. DESCRIPTION handbook, halfpage PINNING PIN 1 2 3 base emitter collector DESCRIPTION NPN transistor in an SC-59 plastic package. PNP plement: 2PB709A. MARKING TYPE NUMBER 2PD601AQ 2PD601AR 2PD601AS MARKING CODE ZQ ZR ZS 1 Top view MAM321 Fig.1 Simplified outline (SC-59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 60 50 6 100 200 100 250 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain DC current gain 2PD601AQ 2PD601AR 2PD601AS VCEsat Cc f T collector-emitter saturation voltage collector capacitance transition frequency 2PD601AQ 2PD601AR 2PD601AS Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. IC = 100 m A; IB = 10 m A; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 2 m A; VCE = 10 V; f = 100 MHz CONDITIONS IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 100 m A; VCE = 2 V; note 1 IC = 2 m A; VCE = 10 V; note 1 160 210 290 - - 100 120 140 - - - 90 MIN. 5 10 - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W MAX. 10 UNIT...