6N06T - PHT6N06T

NXP Semiconductors

General Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

PHT6N06T in SOT223.

Key Features

s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3.

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6N06T pht6n06t by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	6N06T
Manufacturer	NXP Semiconductors
File Size	77.28 KB
Description	PHT6N06T
Datasheet	6N06T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHT6N06T TrenchMOS™ standard level FET M3D087 Rev. 02 — 03 February 2003 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223. 1.2 Features s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3 Applications s DC to DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.3 W s ID ≤ 5.5 A s RDSon ≤ 150 mΩ 2.