Datasheet Summary
PHT6N06T
TrenchMOS™ standard level FET
M3D087
Rev. 02
- 03 February 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHT6N06T in SOT223.
1.2 Features s Low on-state resistance s Fast switching s Low QGD s Surface mounting package.
1.3 Applications s DC to DC converters s General purpose switching.
1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.3 W s ID ≤ 5.5 A s RDSon ≤ 150 mΩ
2. Pinning information
Table 1: Pin 1 2 3 4
Pinning
- SOT223, simplified outline and symbol
Description
Simplified outline gate (g) drain (d)
4 source (s) drain...