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74HC3G34 - Triple Buffer Gate

General Description

The 74HC3G34; 74HCT3G34 are high-speed Si-gate CMOS devices.

They provide three buffer gates.

The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.

Key Features

  • I Wide supply voltage range from 2.0 V to 6.0 V I Symmetrical output impedance I High noise immunity I Low-power dissipation I Balanced propagation delays I Multiple package options I ESD protection: N HBM JESD22-A114E exceeds 2000 V N MM JESD22-A115-A exceeds 200 V I Specified from.
  • 40 °C to +85 °C and.
  • 40 °C to +125 °C 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name 74HC3G34DP.
  • 40 °C to +125 °C TSSOP8 74HCT3G34DP 7.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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74HC3G34; 74HCT3G34 Triple buffer gate Rev. 05 — 7 May 2009 Product data sheet 1. General description The 74HC3G34; 74HCT3G34 are high-speed Si-gate CMOS devices. They provide three buffer gates. The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V. The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. 2. Features I Wide supply voltage range from 2.0 V to 6.0 V I Symmetrical output impedance I High noise immunity I Low-power dissipation I Balanced propagation delays I Multiple package options I ESD protection: N HBM JESD22-A114E exceeds 2000 V N MM JESD22-A115-A exceeds 200 V I Specified from −40 °C to +85 °C and −40 °C to +125 °C 3. Ordering information Table 1.