FEATURES
s Very low ON-resistance: x 7.5 Ω (typ) at VCC = 2.7 V x 6.5 Ω (typ) at VCC = 3.3 V x 6.0 Ω (typ) at VCC = 5 V. s ESD protection: x HBM EIA/JESD22-A114-A exceeds 2 000 V x MM EIA/JESD22-A115-A exceeds 200 V. s High noise immunity s CMOS low power consumption s Direct interface TTL-levels s Latch-up performance meets requirements of JESD78 Class I s Multiple package options s Specified from −40 °C to +80 °C and −40 °C to +125 °C. 3. Quick reference data Table 1: Quick reference data Ground = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. Symbol tPZH, tPZL Parameter turn-on time E to Y or Z Conditions CL = 50 pF; RL = 500 Ω VCC = 3.3 V VCC = 5.0 V tPHZ, tPLZ turn-off time E to Y or Z CL = 50 pF; RL = 500 Ω VCC = 3.3 V VCC = 5.0 V CI input capacitance 5.4 3.6 2 ns ns pF 4.8 3.3 ns ns Min Typ Max Unit 9397 750 12675 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 26 February 2004 1 of 22 Philips Semiconductors 74LVC1G384 Bilateral switch Table 1: Quick reference data …continued Ground = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
NXP Semiconductors
