A2G35S200-01SR3 Overview
Freescale Semiconductor Technical Data Document Number: 0, 5/2016 RF Power GaN Transistor This 40 W RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz. This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band.
A2G35S200-01SR3 Key Features
- High Terminal Impedances for Optimal Broadband Performance
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty