A2G35S200-01SR3
Overview
- High Terminal Impedances for Optimal Broadband Performance
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
| Part | A2G35S200-01SR3 |
|---|---|
| Description | RF Power GaN Transistor |
| Category | Transistor |
| Manufacturer | NXP Semiconductors |
| Size | 330.12 KB |
Related Datasheets
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