Click to expand full text
Freescale Semiconductor Technical Data
Document Number: A2G35S200--01S Rev. 0, 5/2016
RF Power GaN Transistor
This 40 W RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
3500 MHz Typical Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQ = 291 mA, Pout = 40 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
D
Output PAR ACPR
(%)
(dB)
(dBc)
IRL (dB)
3400 MHz
14.7
32.4
7.2
–34.
A2G35S200-01SR3 Datasheet
