A2I09VD015GNR1 Overview
NXP Semiconductors Technical Data Document Number: 0, 06/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD015N wideband integrated circuit is designed with on--chip matching that makes it usable from 575 to 960 MHz. This multi -- stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
A2I09VD015GNR1 Key Features
- On--chip matching (50 ohm input, DC blocked)
- Designed for digital predistortion error correction systems
- Optimized for Doherty