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NXP Semiconductors Technical Data
Document Number: A2I09VD015N Rev. 0, 06/2018
RF LDMOS Wideband Integrated Power Amplifiers
The A2I09VD015N wideband integrated circuit is designed with on--chip matching that makes it usable from 575 to 960 MHz. This multi -- stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
900 MHz
Typical Single--Carrier W--CDMA Characterization Performance: VDD = 48 Vdc, IDQ1(A+B) = 16 mA, IDQ2(A+B) = 84 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency
Gps (dB)
PAE (%)
ACPR (dBc)
920 MHz 940 MHz 960 MHz
32.9
19.3
–45.9
33.0
19.7
–45.5
32.8
19.6
–44.
A2I09VD015GNR1 Datasheet
