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NXP Semiconductors Technical Data
Document Number: A2T21H100- 25S Rev. 1, 01/2022
RF Power LDMOS Transistor
N- Channel Enhancement- Mode Lateral MOSFET
This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
2100 MHz
Typical Doherty Single- Carrier W- CDMA Performance: VDD = 28 Vdc, IDQA = 250 mA, VGSB = 0.2 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
D
Output PAR ACPR
(%)
(dB)
(dBc)
2110 MHz 2140 MHz
17.3
52.1
17.4
51.0
8.2
–32.4
8.0
–33.1
2170 MHz
17.4
50.5
8.0
–35.
A2T21H100-25SR3 Datasheet
