A2T21H100-25SR3 Overview
NXP Semiconductors Technical Data Document Number: 1, 01/2022 RF Power LDMOS Transistor N- Channel Enhancement- Mode Lateral MOSFET This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. 2100 MHz Typical Doherty Single- Carrier W- CDMA Performance:.
A2T21H100-25SR3 Key Features
- Advanced High Performance In- Package Doherty
- Greater Negative Gate- Source Voltage Range for Improved Class C
- Designed for Digital Predistortion Error Correction Systems
- 0.5, +65 -6.0, +10
- Side A, Carrier
- Side B, Peaking