A3G26D055N Overview
This 8 W symmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of...
A3G26D055N Key Features
- High terminal impedances for optimal broadband performance
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for low plexity analog or digital linearization systems
- Optimized for massive MIMO active antenna systems for 5G base stations
- Typical Doherty single-carrier W-CDMA reference circuit performance VDD = 48 Vdc, IDQA = 40 mA, VGSB = -4.9 Vdc, Pout =
- Typical Class AB Side A (top side) W-CDMA reference circuit performance VDD = 48 Vdc, IDQA = 40 mA, Pout = 5.6 W Avg., I
A3G26D055N Applications
- High terminal impedances for optimal broadband performance
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for low plexity analog or digital linearization systems
- Optimized for massive MIMO active antenna systems for 5G base stations