• Part: A3G26D055N
  • Description: Airfast RF Power GaN Amplifier
  • Manufacturer: NXP Semiconductors
  • Size: 416.89 KB
Download A3G26D055N Datasheet PDF
A3G26D055N page 2
Page 2
A3G26D055N page 3
Page 3

Datasheet Summary

Airfast RF Power GaN Amplifier Rev. 3 - 18 October 2023 Product data sheet 1 General description This 8 W symmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. 2 Features and benefits - High terminal impedances for optimal broadband performance - Improved linearized error vector magnitude with next generation...