Part A3G26H502W17S
Description RF Power GaN Transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 341.12 KB
Pricing from 6.27 USD, available from RFMW and VNN Services.
NXP Semiconductors

A3G26H502W17S Overview

Key Specifications

Max Operating Temp: 150 °C
Min Operating Temp: -55 °C

Key Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in--package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • 3 VBWB (Top View) Figure
  • Recommended Operating Conditions VDSS 125 Vdc VGS –8, 0 Vdc VDD 55 Vdc IGMAX 66 mA Tstg – 65 to +150 °C TC – 55 to +150 °C

Price & Availability

Seller Inventory Price Breaks Buy
RFMW 0 - View Offer
VNN Services 6147 1+ : 6.27 USD
10+ : 6.15 USD
100+ : 6.03 USD
1000+ : 5.91 USD
View Offer