Click to expand full text
NXP Semiconductors Technical Data
Document Number: A3G26H502W17S Rev. 1, 01/2021
RF Power GaN Transistor
This 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
2600 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD = Signal
48 Vdc, IDQA = 370 mA, PAR = 9.9 dB @ 0.01%
PVrGoSbBab=il–ity4.o6nVCdCc,DPFo.u(1t )=
80
W
Avg.
A3G26H502W17S Datasheet
