A3G26H502W17S Overview
NXP Semiconductors Technical Data Document Number: 1, 01/2021 RF Power GaN Transistor This 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band.
A3G26H502W17S Key Features
- High terminal impedances for optimal broadband performance
- Advanced high performance in--package Doherty
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating
- 65 to +150
- 55 to +150
- Carrier
- Side A, Carrier