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A3M36SL037S - Airfast Power Amplifier

Download the A3M36SL037S datasheet PDF. This datasheet also covers the A3M36SL037 variant, as both devices belong to the same airfast power amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

Electrical characteristics4 Ratings 4 Maximum ratings 4 Lifetime 5 ESD protection characteristics 5 Moisture sensitivity level5 Operating characteristics5 Nominal DAC settings 5 Functional tests 6 Wideband ruggedness 6 Typical performance6 Register map and OTP memory7 One-time programmable me

Key Features

  • Advanced high performance in-package Doherty.
  • Fully matched (50 ohm input/output, DC blocked).
  • Designed for low complexity digital linearization systems.
  • Autobias on power up.
  • Temperature sensing.
  • Digital interface (I2C or SPI).
  • Embedded registers and DACs for setting bias conditions.
  • Tx Enable control pin for TDD operation A3M36SL037I A3M36SL037S 3400.
  • 3800 MHz, 29 dB, 5 W Avg. Airfast Power Amplifier Module with A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (A3M36SL037-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by NXP Semiconductors

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A3M36SL037 Airfast Power Amplifier
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A3M34SL039I Airfast Power Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
A3M36SL037 Airfast Power Amplifier Module with Autobias Control Rev. 0 — January 2023 Data Sheet: Technical Data The A3M36SL037 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The fieldproven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. Communications to the module can be accomplished via either I2C or SPI.