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A3M37TL039 - Power Amplifier

Description

Pin Function GND N.C.

Features

  • Frequency: 3600.
  • 3800 MHz.
  • Advanced high performance in--package Doherty.
  • Fully matched (50 ohm input/output, DC blocked).
  • Designed for low complexity analog or digital linearization systems Document Number: A3M37TL039 Rev. 2, 12/2020 A3M37TL039 3600.
  • 3800 MHz, 28 dB, 7 W Avg.

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Full PDF Text Transcription

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NXP Semiconductors Technical Data Power Amplifier Module for LTE and 5G The A3M37TL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field--proven LDMOS power amplifiers are designed for TDD and FDD LTE systems. 3600–3800 MHz  Typical LTE Performance: Pout = 7 W Avg., VDD = 26 Vdc, 1  20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1) Carrier Center Frequency Gain (dB) ACPR (dBc) PAE (%) 3610 MHz 3700 MHz 3790 MHz 28.2 –27.6 39.2 28.2 –30.0 39.5 28.2 –30.7 38.8 3700–4100 MHz  Typical LTE Performance: Pout = 1.6 W Avg.
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