NXP Semiconductors A3M37TL039
The A3M37TL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. The field--proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.| Part No. | A3M37TL039 |
|---|---|
| Datasheet | A3M37TL039 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Power Amplifier |
| Buy | Stock & Price |
FEATURES
● Frequency: 3600–3800 MHz● Advanced high performance in--package Doherty
● Fully matched (50 ohm input/output, DC blocked)
● Designed for low complexity analog or digital linearization systems Document Number: A3M37TL039 Rev. 2, 12/2020 A3M37TL039 3600–3800 MHz, 28 dB, 7 W Avg. AIRFAST POWER AMPLIFIER MODULE 10 mm 6 mm Module 2020 NXP B.V. RF Device Data NXP Semiconductors A3M37TL039 1 19 GND 20 GND 21 GND 22 GND 23 GND 24 GND 25 GND 26 GND Pin 1 index area GND 1 N.C. 2 VDC2 ( 1) 3 VDC1 4 RFin 5 18 GND 17 RFout 16 GND 15 GND 14 GND GND 13 N.C. 12 VDP2(1) 11 VDP1 10 VGC2 9 VGC1 8 VGP1 7 VGP2 6 (Top View) 13 12 11 10 9 8 7 6 5 14 4 15 3 27 16 2 17 1 18 Pin 1 index area 19 20 21 22 23 24 25 26 (Bottom View) Note: Exposed backside of the package is DC and RF ground. Figure 1. Pin Connections 1. VDC2 and VDP2 are DC coupled internal to the package and must be powered by a single DC power supply. A3M37TL039 2 RF Device Data NXP Semiconductors Table 1. Functional Pin
DESCRIPTION
Pin Number 1, 13, 14, 15, 16, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27 2, 12 3 4 5 6 7 8 9 10 11 17 Pin Function GND N.C.
