NXP Semiconductors A3M39SL039
The A3M39SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. The field-proven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings.FEATURES AND BENEFITS
● Advanced high performance in-package Doherty● Fully matched (50 ohm input/output, DC blocked)
● Designed for low complexity digital linearization systems
● Autobias on power up
● Temperature sensing
● I2C digital interface
● Embedded registers and DACs for setting bias conditions
● Tx Enable control pin for TDD operation NXP Semiconductors 4 Pinning information 4.1 Pinning A3M39SL039 Airfast Power Amplifier Module with Autobias Control Figure 1. Pin configuration A3M39SL039 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 July 2024 © 2024 NXP B.V. All rights reserved. Document feedback 2 / 32 NXP Semiconductors 4.2 Functional pin description Table 2. Functional pin description Pin Number 1 2 3, 5, 6, 8, 14, 17, 22, 23, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38 4, 18, 21 7 9 10 11 12 13 15 16 19 20 24 A3M39SL039 Airfast Power Amplifier Module with Autobias Control Pin Function VDC2 VDC1 GND Pin
DESCRIPTION
Carrier Drain Supply, Stage 2 Carrier Drain Supply, Stage 1 Ground N.C.