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NXP Semiconductors Technical Data
Power Amplifier Module for LTE and 5G
The A3M39TL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field--proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.
3700–3980 MHz
Typical LTE Performance: Pout = 8 W Avg., VDD = 28 Vdc, 1 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1)
Carrier Center Frequency
Gain (dB)
ACPR (dBc)
PAE (%)
3710 MHz
27.3
–28.0
38.9
3800 MHz
27.1
–31.7
39.4
3970 MHz
27.5
–35.0
38.4
1. All data measured with device soldered in NXP reference circuit.
A3M39TL039 Datasheet
