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A3T09S100N
Airfast RF Power LDMOS Transistor
Rev. 0 — March 2021
Designed for two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in radio equipment.
Typical Single--Carrier W–CDMA Production Fixture Performance:
VDD = 28 Vdc, IDQ = 450 mA, Pout = 15 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Frequency (MHz)
Gps (dB)
D
Avg. Pout
(%)
(W)
880
22.8
33.8
15
Typical Reference Circuit Performance: VDD = 28 Vdc, IDQ = 450 mA,
Pin = 0.125 W, CW
Frequency (MHz)
Gps
D
Pout
(dB)
(%)
(W)
136
28.5
64.
A3T09S100N Datasheet
