NXP Semiconductors A3T09S100N
Airfast RF Power LDMOS Transistor
| Part No. | A3T09S100N |
|---|---|
| Datasheet | A3T09S100N Download |
| Manufacturer |  NXP Semiconductors |
| Description | Airfast RF Power LDMOS Transistor |
| Buy | Stock & Price |
FEATURES
● Characterized for operation from 136 to 941 MHz● Unmatched input and output allowing wide frequency range utilization
● Integrated ESD protection
● Wideband — full power across each mobile radio band
● Exceptional thermal performance
● High linearity for: TETRA, SSB, LTE Typical
APPLICATIONS
● Output stage for VHF, UHF and 900 MHz 28 V base stations● Output stage for VHF, UHF and 900 MHz high performance mobile radios Data Sheet: Technical Data A3T09S100N 136–941 MHz, 100 W CW, 32 V AIRFAST RF POWER LDMOS TRANSISTOR TO--270--2 PLASTIC Gate 2 1 Drain (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections NXP reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. NXP Semiconductors Table 1.
MAXIMUM RATINGS
Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Ra...
