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A3T09S100N

Manufacturer: NXP Semiconductors
A3T09S100N datasheet preview

Datasheet Details

Part number A3T09S100N
Datasheet A3T09S100N-NXP.pdf
File Size 421.84 KB
Manufacturer NXP Semiconductors
Description Airfast RF Power LDMOS Transistor
A3T09S100N page 2 A3T09S100N page 3

A3T09S100N Overview

A3T09S100N Airfast RF Power LDMOS Transistor Rev. 0 March 2021 Designed for two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, mon--source amplifier applications in radio equipment.

A3T09S100N Key Features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilization
  • Integrated ESD protection
  • Wideband
  • full power across each mobile radio band
  • Exceptional thermal performance
  • High linearity for: TETRA, SSB, LTE

A3T09S100N Applications

  • full power across each mobile radio band  Exceptional thermal performance  High linearity for: TETRA, SSB, LTE
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A3T09S100N Distributor

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