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A5G19H605W19N - Airfast RF Power GaN Transistor

Description

This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz.

Features

  • High terminal impedances for optimal broadband performance.
  • Advanced high performance in-package Doherty.
  • Improved linearized error vector magnitude with next generation signal.
  • Able to withstand extremely high output VSWR and broadband operating conditions.
  • Plastic package 3 Typical performance Table 1. 1900 MHz.
  • Typical Doherty single-carrier W-CDMA production test fixture performance VDD = 48 Vdc, IDQA = 300 mA, VGSB =.
  • 5.0 Vdc,.

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Datasheet Details

Part number A5G19H605W19N
Manufacturer NXP
File Size 485.05 KB
Description Airfast RF Power GaN Transistor
Datasheet download datasheet A5G19H605W19N Datasheet
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A5G19H605W19N Airfast RF Power GaN Transistor Rev. 1 — 20 March 2024 Product data sheet 1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for applications operating in the 1930 to 1995 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
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