A5G23H065N Overview
A5G23H065N Airfast RF Power GaN Transistor Rev. 1 November 2022 This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band.
A5G23H065N Key Features
- High terminal impedances for optimal broadband performance
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating
- Designed for low plexity linearization systems
- Optimized for massive MIMO active antenna systems for 5G base stations
- 65 to +150
- 55 to +150