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A5G23H065N - Airfast RF Power GaN Transistor

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Overview

A5G23H065N Airfast RF Power GaN Transistor Rev.

1 — November 2022 This 8.

Key Features

  • High terminal impedances for optimal broadband performance.
  • Improved linearized error vector magnitude with next generation signal.
  • Able to withstand extremely high output VSWR and broadband operating conditions.
  • Designed for low complexity linearization systems.
  • Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G23H065N 2300.
  • 2400 MHz, 8.8 W Avg. , 48 V.

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