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A5G26H605W19N - Airfast RF Power GaN Transistor

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Overview

A5G26H605W19N Airfast RF Power GaN Transistor Rev.

1 — 21 December 2023 This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide.

Key Features

  • High terminal impedances for optimal broadband performance.
  • Advanced high performance in.
  • package Doherty.
  • Improved linearized error vector magnitude with next generation signal.
  • Able to withstand extremely high output VSWR and broadband operating conditions.
  • Plastic package Product data sheet A5G26H605W19N 2496.
  • 2690 MHz, 85 W Avg. , 48 V.

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