A5G26H605W19N
Features
- High terminal impedances for optimal broadband performance
- Advanced high performance in- package Doherty
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Plastic package
Product data sheet
2496- 2690 MHz, 85 W Avg., 48 V AIRFAST RF POWER Ga N TRANSISTOR
OM- 780- 4S4S PLASTIC
VBWin A/VGSA 1 RFin A/VGSA 2
Carrier 8 VBWout A 7 RFout A/VDSA
RFin B/VGSB 3
6 RFout B/VDSB
NC 4
Peaking
5 NC
(Top view)
Note: Exposed backside of the package is the source terminal for the transistor.
Figure 1. Pin Connections
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage Gate- Source Voltage Operating Voltage Maximum Forward Gate Current, IG (A+B), @ TC = 25°C Storage Temperature Range Case Operating Temperature Range Maximum Channel Temperature Table 2. Remended Operating Conditions
VDSS
Vdc
- 16,...
