NXP Semiconductors A5G35H120N
This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz. This part is characterized and performance is guaranteed for applications operating in the 3300 to 3800 MHz band.| Part No. | A5G35H120N |
|---|---|
| Datasheet | A5G35H120N Download |
| Manufacturer |  NXP Semiconductors |
| Description | Airfast RF Power GaN Transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High terminal impedances for optimal broadband performance● Improved linearized error vector magnitude with next generation signal
● Able to withstand extremely high output VSWR and broadband operating conditions
● Designed for low complexity linearization systems
● Optimized for massive MIMO active antenna systems for 5G base stations 3 Typical performance Table 1. 3500 MHz — Typical Doherty single-carrier W-CDMA reference circuit performance VCDCDD=F.4[18] Vdc, IDQA = 70 mA, VGSB = –4.0 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 3400 MHz 16.0 56.6 8.0 –29.8 3500 MHz 15.8 56.7 8.1 –31.3 3600 MHz 15.7 56.2 8.1 –33.1 [1] All data measured with device soldered to NXP reference circuit. NXP Semiconductors A5G35H120N Airfast RF Power GaN Amplifier Table 2. 3300–3700 MHz — Typical Doherty single-carrier W-CDMA reference circuit performance VCDCDD=F.4[18] Vdc, IDQA = 70 mA, VGSB = –4.0...
