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A5G35H120N - Airfast RF Power GaN Transistor

Description

This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz.

Features

  • High terminal impedances for optimal broadband performance.
  • Improved linearized error vector magnitude with next generation signal.
  • Able to withstand extremely high output VSWR and broadband operating conditions.
  • Designed for low complexity linearization systems.
  • Optimized for massive MIMO active antenna systems for 5G base stations 3 Typical performance Table 1. 3500 MHz.
  • Typical Doherty single-carrier W-CDMA reference circuit performanc.

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Datasheet Details

Part number A5G35H120N
Manufacturer NXP
File Size 402.47 KB
Description Airfast RF Power GaN Transistor
Datasheet download datasheet A5G35H120N Datasheet
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A5G35H120N Airfast RF Power GaN Amplifier Rev. 3 — 18 October 2023 Product data sheet 1 General description This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz. This part is characterized and performance is guaranteed for applications operating in the 3300 to 3800 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
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