Datasheet4U Logo Datasheet4U.com

A5G35H120N - Airfast RF Power GaN Transistor

📥 Download Datasheet

General Description

This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz.

Overview

A5G35H120N Airfast RF Power GaN Amplifier Rev.

3 — 18 October 2023 Product data sheet 1.

Key Features

  • High terminal impedances for optimal broadband performance.
  • Improved linearized error vector magnitude with next generation signal.
  • Able to withstand extremely high output VSWR and broadband operating conditions.
  • Designed for low complexity linearization systems.
  • Optimized for massive MIMO active antenna systems for 5G base stations 3 Typical performance Table 1. 3500 MHz.
  • Typical Doherty single-carrier W-CDMA reference circuit performanc.

More Datasheets from NXP Semiconductors

Part Number Description
A5G35S004N Airfast RF Power GaN Transistor
A5G35S008N Airfast RF Power GaN Transistor
A5G38H045N Airfast RF Power GaN Transistor
A5G19H605W19N Airfast RF Power GaN Transistor
A5G23H065N Airfast RF Power GaN Transistor
A5G26H605W19N Airfast RF Power GaN Transistor