NXP Semiconductors A5G38H045N
Airfast RF Power GaN Transistor
| Part No. | A5G38H045N |
|---|---|
| Datasheet | A5G38H045N Download |
| Manufacturer |  NXP Semiconductors |
| Description | Airfast RF Power GaN Transistor |
| Buy | Stock & Price |
FEATURES
● High terminal impedances for optimal broadband performance● Improved linearized error vector magnitude with next generation signal
● Able to withstand extremely high output VSWR and broadband operating conditions
● Designed for low complexity linearization systems
● Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G38H045N 3400–4000 MHz, 5.4 W Avg., 48 V AIRFAST RF POWER GaN TRANSISTOR DFN 7 × 6.5 PLASTIC VGSA 1 N.C. 2 6 VDSA 5 N.C. VGSB 3 4 VDSB (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections NXP reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. NXP Semiconductors Table 1.
MAXIMUM RATINGS
Rating Symbol Value Unit Drain−Source Voltage Gate−Source Voltage Operating Voltage Maximum Forward Gate Current, IG (A+B), @ TC = 25°C Storage Temperature Range Case Operating Temperature Range Maximum Channel Temperature Table 2.
