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A5G38H045N
Airfast RF Power GaN Transistor
Rev. 1 — November 2022
This 5.4 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 4000 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3400 to 4000 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
3700–3980 MHz
• Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 35 mA, VGSB = –4.2 Vdc, Pout = 5.4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
A5G38H045N Datasheet
