NXP Semiconductors A5M20TG042
The A5M20TG042 is a Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. The field-proven LDMOS and GaN integrated power amplifiers are designed for TDD and FDD 32T mMIMO systems.| Part No. | A5M20TG042 |
|---|---|
| Datasheet | A5M20TG042 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Airfast Power Amplifier Module |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier● Advanced high performance in-package Doherty
● Fully matched (50 ohm input/output, DC blocked)
● Reduced memory effects for improved linearized error vector magnitude
● Simultaneous dual band operation (B3–B1/B66) 3 Typical performance Table 1. 1805–2200 MHz — Typical LTE performance Pout = 16 W Avg., VD1 + VD2 = 28 Vdc, VD3A = VD3B = 45 Vdc, 1 × 20 MHz LTE, input signal PAR = 8 dB @ 0.01% probability on CCDF. [1] Carrier center frequency Gain (dB) ACPR (dBc) PAE (%) 1815 MHz 47.7 –27.1 43.5 2000 MHz 49.1 –31.8 43.5 2190 MHz 48.3 –33.4 42.7 [1] All data measured with device soldered to NXP reference circuit. NXP Semiconductors 4 Pinning information 4.1 Pinning A5M20TG042 Airfast Power Amplifier Module Figure 1. Pin configuration A5M20TG042 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 May 2024 © 2024 NXP B.V.
