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A5M20TG042 Datasheet

Manufacturer: NXP Semiconductors
A5M20TG042 datasheet preview

Datasheet Details

Part number A5M20TG042
Datasheet A5M20TG042-NXP.pdf
File Size 646.67 KB
Manufacturer NXP Semiconductors
Description Airfast Power Amplifier Module
A5M20TG042 page 2 A5M20TG042 page 3

A5M20TG042 Overview

The A5M20TG042 is a Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN integrated power amplifiers are designed for TDD and FDD 32T mMIMO systems.

A5M20TG042 Key Features

  • 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in-package Doherty
  • Fully matched (50 ohm input/output, DC blocked)
  • Reduced memory effects for improved linearized error vector magnitude
  • Simultaneous dual band operation (B3-B1/B66)
  • Typical LTE performance

A5M20TG042 Applications

  • 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier
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A5M20TG042 Distributor

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